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| Datasheet | SQ4153EY-T1_GE3 |
| File Size | 267.87 KB |
| Total Pages | 11 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ4153EY-T1_GE3 |
| Description | MOSFET P-CHANNEL 12V 25A 8SOIC |
SQ4153EY-T1_GE3 - Vishay Siliconix
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SQ4153EY-T1_GE3 | Vishay Siliconix | MOSFET P-CHANNEL 12V 25A 8SOIC | 327 More on Order |
URL Link
www.oemstron.com/datasheet/SQ4153EY-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 8.32mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 151nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 6V FET Feature - Power Dissipation (Max) 7.1W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |