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| Datasheet | SQ4431EY-T1_GE3 |
| File Size | 187.28 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ4431EY-T1_GE3 |
| Description | MOSFET P-CH 30V 10.8A 8SOIC |
SQ4431EY-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQ4431EY-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1265pF @ 15V FET Feature - Power Dissipation (Max) 6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |