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| Datasheet | SQ4532AEY-T1_GE3 |
| File Size | 263.47 KB |
| Total Pages | 14 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ4532AEY-T1_GE3 |
| Description | MOSFET N/P-CH 30V 7.3/5.3A 8SOIC |
SQ4532AEY-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQ4532AEY-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.3A (Tc), 5.3A (Tc) Rds On (Max) @ Id, Vgs 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V, 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 535pF @ 15V, 528pF @ 15V Power - Max 3.3W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |