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| Datasheet | SQ4961EY-T1_GE3 |
| File Size | 189.99 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ4961EY-T1_GE3 |
| Description | MOSFET DUAL P-CHAN 60V SO8 |
SQ4961EY-T1_GE3 - Vishay Siliconix
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SQ4961EY-T1_GE3 | Vishay Siliconix | MOSFET DUAL P-CHAN 60V SO8 | 409 More on Order |
URL Link
www.oemstron.com/datasheet/SQ4961EY-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) Rds On (Max) @ Id, Vgs 85mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 25V Power - Max 3.3W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |