Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SQA470EEJ-T1_GE3 |
| File Size | 273.13 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQA470EEJ-T1_GE3 |
| Description | MOSFET N-CHAN 30V POWERPAK SC-70 |
SQA470EEJ-T1_GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SQA470EEJ-T1_GE3 | Vishay Siliconix | MOSFET N-CHAN 30V POWERPAK SC-70 | 3687 More on Order |
URL Link
www.oemstron.com/datasheet/SQA470EEJ-T1_GE3
|
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 56mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 453pF @ 20V FET Feature - Power Dissipation (Max) 13.6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |