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SQD40030E_GE3 Datasheet

SQD40030E_GE3 Cover
DatasheetSQD40030E_GE3
File Size796.9 KB
Total Pages4
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQD40030E_GE3
Description MOSFET N-CHANNEL 40V TO252AA

SQD40030E_GE3 - Vishay Siliconix

SQD40030E_GE3 Datasheet Page 1
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SQD40030E_GE3 Datasheet Page 4

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URL Link

SQD40030E_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63