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| Datasheet | SQD50N04-09H-GE3 |
| File Size | 105.65 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQD50N04-09H-GE3 |
| Description | MOSFET N-CH 40V 50A TO252 |
SQD50N04-09H-GE3 - Vishay Siliconix
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SQD50N04-09H-GE3 | Vishay Siliconix | MOSFET N-CH 40V 50A TO252 | 499 More on Order |
URL Link
www.oemstron.com/datasheet/SQD50N04-09H-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |