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| Datasheet | SQJ560EP-T1_GE3 |
| File Size | 303.92 KB |
| Total Pages | 13 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQJ560EP-T1_GE3 |
| Description | MOSFET DUAL N P CH 60V PPAK SO-8 |
SQJ560EP-T1_GE3 - Vishay Siliconix
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URL Link
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 30A (Tc), 18A (Tc) Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V Power - Max 34W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |