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| Datasheet | SQJ570EP-T1_GE3 |
| File Size | 293.8 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQJ570EP-T1_GE3 |
| Description | MOSFET N/P-CH 100V POWERPAK SO8 |
SQJ570EP-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQJ570EP-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 15A (Tc), 9.5A (Tc) Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V, 600pF @ 25V Power - Max 27W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |