Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SQJQ466E-T1_GE3 |
| File Size | 171.7 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQJQ466E-T1_GE3 |
| Description | MOSFET N-CH 60V 200A POWERPAK8 |
SQJQ466E-T1_GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SQJQ466E-T1_GE3 | Vishay Siliconix | MOSFET N-CH 60V 200A POWERPAK8 | 2802 More on Order |
URL Link
www.oemstron.com/datasheet/SQJQ466E-T1_GE3
|
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10210pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 8 x 8 Package / Case 8-PowerTDFN |