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| Datasheet | SQJQ906E-T1_GE3 |
| File Size | 185.9 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQJQ906E-T1_GE3 |
| Description | MOSFET 2 N-CH 40V POWERPAK8X8 |
SQJQ906E-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQJQ906E-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 95A (Tc) Rds On (Max) @ Id, Vgs 3.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 20V Power - Max 50W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 8 x 8 Dual Supplier Device Package PowerPAK® 8 x 8 Dual |