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| Datasheet | SQP120N10-09_GE3 |
| File Size | 147.14 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQP120N10-09_GE3 |
| Description | MOSFET N-CH 100V 120A TO220AB |
SQP120N10-09_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQP120N10-09_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8645pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |