Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SQR50N04-3M8_GE3 Datasheet

SQR50N04-3M8_GE3 Cover
DatasheetSQR50N04-3M8_GE3
File Size132.97 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQR50N04-3M8_GE3
Description MOSFET N-CHANNEL 40V 50A DPAK

SQR50N04-3M8_GE3 - Vishay Siliconix

SQR50N04-3M8_GE3 Datasheet Page 1
SQR50N04-3M8_GE3 Datasheet Page 2
SQR50N04-3M8_GE3 Datasheet Page 3
SQR50N04-3M8_GE3 Datasheet Page 4
SQR50N04-3M8_GE3 Datasheet Page 5
SQR50N04-3M8_GE3 Datasheet Page 6
SQR50N04-3M8_GE3 Datasheet Page 7
SQR50N04-3M8_GE3 Datasheet Page 8

The Products You May Be Interested In

SQR50N04-3M8_GE3 SQR50N04-3M8_GE3 Vishay Siliconix MOSFET N-CHANNEL 40V 50A DPAK 119

More on Order

URL Link

SQR50N04-3M8_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6700pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-4, DPak (3 Leads + Tab)