Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SQS401ENW-T1_GE3 |
| File Size | 214.2 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQS401ENW-T1_GE3 |
| Description | MOSFET P-CH 40V 16A POWERPAK1212 |
SQS401ENW-T1_GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SQS401ENW-T1_GE3 | Vishay Siliconix | MOSFET P-CH 40V 16A POWERPAK1212 | 148 More on Order |
URL Link
www.oemstron.com/datasheet/SQS401ENW-T1_GE3
|
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.2nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1875pF @ 20V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |