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| Datasheet | SQS420EN-T1_GE3 |
| File Size | 1,120.51 KB |
| Total Pages | 13 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQS420EN-T1_GE3 |
| Description | MOSFET N-CH 20V 8A 1212-8 |
SQS420EN-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQS420EN-T1_GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 28mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 490pF @ 10V FET Feature - Power Dissipation (Max) 18W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |