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| Datasheet | SQS481ENW-T1_GE3 |
| File Size | 236.61 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQS481ENW-T1_GE3 |
| Description | MOSFET P-CH 150V 4.7A 1212-8 |
SQS481ENW-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQS481ENW-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.095Ohm @ 5A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 385pF @ 75V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |