Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SQS482EN-T1_GE3 |
| File Size | 557.58 KB |
| Total Pages | 13 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQS482EN-T1_GE3 |
| Description | MOSFET N-CH 30V 16A 1212-8 |
SQS482EN-T1_GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SQS482EN-T1_GE3 | Vishay Siliconix | MOSFET N-CH 30V 16A 1212-8 | 160 More on Order |
URL Link
www.oemstron.com/datasheet/SQS482EN-T1_GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 16.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1865pF @ 25V FET Feature - Power Dissipation (Max) 62W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |