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| Datasheet | SQS966ENW-T1_GE3 |
| File Size | 598.27 KB |
| Total Pages | 11 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQS966ENW-T1_GE3 |
| Description | MOSFET N-CHAN 60V |
SQS966ENW-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQS966ENW-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Rds On (Max) @ Id, Vgs 36mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 572pF @ 25V Power - Max 27.8W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount, Wettable Flank Package / Case PowerPAK® 1212-8W Dual Supplier Device Package PowerPAK® 1212-8W Dual |