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| Datasheet | SQUN702E-T1_GE3 |
| File Size | 314.84 KB |
| Total Pages | 16 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQUN702E-T1_GE3 |
| Description | MOSFET N&P-CH COMMON DRAIN |
SQUN702E-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQUN702E-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N and P-Channel, Common Drain FET Feature Standard Drain to Source Voltage (Vdss) 40V, 200V Current - Continuous Drain (Id) @ 25°C 30A (Tc), 20A (Tc) Rds On (Max) @ Id, Vgs 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA, 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC, 14nC, 30.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1474pF, 1450pF, 1302pF @ 20V, 100V Power - Max 48W (Tc), 60W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount, Wettable Flank Package / Case Die Supplier Device Package Die |