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| Datasheet | SS12P4S-M3/86A |
| File Size | 88.14 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SS12P4S-M3/86A, SS12P4S-M3/87A |
| Description | DIODE SCHOTTKY 30V 12A TO277A, DIODE SCHOTTKY 40V 12A TO277A |
SS12P4S-M3/86A - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 600mV @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 800µA @ 40V Capacitance @ Vr, F 750pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 600mV @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 800µA @ 40V Capacitance @ Vr, F 750pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 150°C |