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| Datasheet | SSM6J53FE(TE85L,F) |
| File Size | 173.64 KB |
| Total Pages | 6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SSM6J53FE(TE85L,F) |
| Description | MOSFET P-CH 20V 1.8A ES6 |
SSM6J53FE(TE85L,F) - Toshiba Semiconductor and Storage
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URL Link
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 2.5V Rds On (Max) @ Id, Vgs 136mOhm @ 1A, 2.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 4V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 568pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ES6 (1.6x1.6) Package / Case SOT-563, SOT-666 |