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| Datasheet | STB11NM60-1 |
| File Size | 548.57 KB |
| Total Pages | 12 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STB11NM60-1, STP11NM60FP |
| Description | MOSFET N-CH 650V 11A I2PAK, MOSFET N-CH 600V 11A TO220FP |
STB11NM60-1 - STMicroelectronics
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STB11NM60-1 | STMicroelectronics | MOSFET N-CH 650V 11A I2PAK | 225 More on Order |
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Manufacturer STMicroelectronics Series MDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V FET Feature - Power Dissipation (Max) 160W (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer STMicroelectronics Series MDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |