Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

STB150N3LH6 Datasheet

STB150N3LH6 Cover
DatasheetSTB150N3LH6
File Size997.84 KB
Total Pages15
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STB150N3LH6
Description MOSFET N CH 30V 80A D2PAK

STB150N3LH6 - STMicroelectronics

STB150N3LH6 Datasheet Page 1
STB150N3LH6 Datasheet Page 2
STB150N3LH6 Datasheet Page 3
STB150N3LH6 Datasheet Page 4
STB150N3LH6 Datasheet Page 5
STB150N3LH6 Datasheet Page 6
STB150N3LH6 Datasheet Page 7
STB150N3LH6 Datasheet Page 8
STB150N3LH6 Datasheet Page 9
STB150N3LH6 Datasheet Page 10
STB150N3LH6 Datasheet Page 11
STB150N3LH6 Datasheet Page 12
STB150N3LH6 Datasheet Page 13
STB150N3LH6 Datasheet Page 14
STB150N3LH6 Datasheet Page 15

The Products You May Be Interested In

STB150N3LH6 STB150N3LH6 STMicroelectronics MOSFET N CH 30V 80A D2PAK 113

More on Order

URL Link

STB150N3LH6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3800pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB