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Datasheet | STB18N60M2 |
File Size | 856.99 KB |
Total Pages | 27 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | STB18N60M2, STP18N60M2, STW18N60M2 |
Description | MOSFET N-CH 600V D2PAK, MOSFET N-CH 600V TO-220, MOSFET N-CH 600V 13A TO-247 |
STB18N60M2 - STMicroelectronics
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The Products You May Be Interested In
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STB18N60M2 | STMicroelectronics | MOSFET N-CH 600V D2PAK | 229 More on Order |
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STP18N60M2 | STMicroelectronics | MOSFET N-CH 600V TO-220 | 399 More on Order |
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STW18N60M2 | STMicroelectronics | MOSFET N-CH 600V 13A TO-247 | 401 More on Order |
URL Link
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |