Datasheet | STB300NH02L |
File Size | 332.35 KB |
Total Pages | 14 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | STB300NH02L, STP300NH02L |
Description | MOSFET N-CH 24V 120A D2PAK, MOSFET N-CH 24V 120A TO-220 |
STB300NH02L - STMicroelectronics
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STMicroelectronics Manufacturer STMicroelectronics Series STripFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 109.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7055pF @ 15V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
STMicroelectronics Manufacturer STMicroelectronics Series STripFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 109.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7055pF @ 15V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |