Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

STB50NF25 Datasheet

STB50NF25 Cover
DatasheetSTB50NF25
File Size338.12 KB
Total Pages14
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STB50NF25, STP50NF25
Description MOSFET N-CH 250V 45A D2PAK, MOSFET N-CH 250V 45A TO-220

STB50NF25 - STMicroelectronics

STB50NF25 Datasheet Page 1
STB50NF25 Datasheet Page 2
STB50NF25 Datasheet Page 3
STB50NF25 Datasheet Page 4
STB50NF25 Datasheet Page 5
STB50NF25 Datasheet Page 6
STB50NF25 Datasheet Page 7
STB50NF25 Datasheet Page 8
STB50NF25 Datasheet Page 9
STB50NF25 Datasheet Page 10
STB50NF25 Datasheet Page 11
STB50NF25 Datasheet Page 12
STB50NF25 Datasheet Page 13
STB50NF25 Datasheet Page 14

The Products You May Be Interested In

STB50NF25 STB50NF25 STMicroelectronics MOSFET N-CH 250V 45A D2PAK 382

More on Order

STP50NF25 STP50NF25 STMicroelectronics MOSFET N-CH 250V 45A TO-220 5557

More on Order

URL Link

STB50NF25

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

69mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

68.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2670pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STP50NF25

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

69mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

68.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2670pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3