Semiconductors
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| Datasheet | STB7ANM60N |
| File Size | 740.84 KB |
| Total Pages | 20 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STB7ANM60N, STD7ANM60N |
| Description | MOSFET N-CH 600V DPAK, MOSFET N-CH 600V DPAK |
STB7ANM60N - STMicroelectronics
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Manufacturer STMicroelectronics Series Automotive, AEC-Q101, MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250mA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 363pF @ 50V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series Automotive, AEC-Q101, MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 363pF @ 50V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |