Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

STD12N65M2 Datasheet

STD12N65M2 Cover
DatasheetSTD12N65M2
File Size935.89 KB
Total Pages16
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STD12N65M2
Description MOSFET N-CH 650V 8A DPAK

STD12N65M2 - STMicroelectronics

STD12N65M2 Datasheet Page 1
STD12N65M2 Datasheet Page 2
STD12N65M2 Datasheet Page 3
STD12N65M2 Datasheet Page 4
STD12N65M2 Datasheet Page 5
STD12N65M2 Datasheet Page 6
STD12N65M2 Datasheet Page 7
STD12N65M2 Datasheet Page 8
STD12N65M2 Datasheet Page 9
STD12N65M2 Datasheet Page 10
STD12N65M2 Datasheet Page 11
STD12N65M2 Datasheet Page 12
STD12N65M2 Datasheet Page 13
STD12N65M2 Datasheet Page 14
STD12N65M2 Datasheet Page 15
STD12N65M2 Datasheet Page 16

The Products You May Be Interested In

STD12N65M2 STD12N65M2 STMicroelectronics MOSFET N-CH 650V 8A DPAK 384

More on Order

URL Link

STD12N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

535pF @ 100V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63