Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STD30NE06LT4 |
| File Size | 280.55 KB |
| Total Pages | 8 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STD30NE06LT4, STD30NE06L |
| Description | MOSFET N-CH 60V 30A DPAK, MOSFET N-CH 60V 30A DPAK |
STD30NE06LT4 - STMicroelectronics
The Products You May Be Interested In
 |
STD30NE06LT4 | STMicroelectronics | MOSFET N-CH 60V 30A DPAK | 447 More on Order |
 |
STD30NE06L | STMicroelectronics | MOSFET N-CH 60V 30A DPAK | 221 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series STripFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 28mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V FET Feature - Power Dissipation (Max) 55W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer STMicroelectronics Series STripFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 28mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V FET Feature - Power Dissipation (Max) 55W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |