Datasheet | STF10N105K5 |
File Size | 718.69 KB |
Total Pages | 18 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | STF10N105K5, STP10N105K5, STW10N105K5 |
Description | MOSFET N-CH 1050V 6A TO220FP, MOSFET N-CH 1050V 6A TO-220AB, MOSFET N-CH 1050V 6A TO-247 |
STF10N105K5 - STMicroelectronics
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STF10N105K5 | STMicroelectronics | MOSFET N-CH 1050V 6A TO220FP | 1365 More on Order |
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STP10N105K5 | STMicroelectronics | MOSFET N-CH 1050V 6A TO-220AB | 1145 More on Order |
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STW10N105K5 | STMicroelectronics | MOSFET N-CH 1050V 6A TO-247 | 1360 More on Order |
URL Link
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ K5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1050V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.3Ohm @ 3A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 545pF @ 100V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ K5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1050V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.3Ohm @ 3A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 545pF @ 100V FET Feature - Power Dissipation (Max) 130W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
STMicroelectronics Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1050V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.3Ohm @ 3A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 545pF @ 100V FET Feature - Power Dissipation (Max) 130W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |