Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STF15N65M5 |
| File Size | 919.5 KB |
| Total Pages | 17 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | STF15N65M5, STP15N65M5, STFI15N65M5 |
| Description | MOSFET N-CH 650V 11A TO-220FP, MOSFET N CH 650V 11A TO220, MOSFET N CH 650V 11A I2PAKFP |
STF15N65M5 - STMicroelectronics
The Products You May Be Interested In
 |
STF15N65M5 | STMicroelectronics | MOSFET N-CH 650V 11A TO-220FP | 2033 More on Order |
 |
STP15N65M5 | STMicroelectronics | MOSFET N CH 650V 11A TO220 | 1809 More on Order |
 |
STFI15N65M5 | STMicroelectronics | MOSFET N CH 650V 11A I2PAKFP | 2668 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 340mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 816pF @ 100V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 340mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 810pF @ 100V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 340mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 816pF @ 100V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAKFP (TO-281) Package / Case TO-262-3 Full Pack, I²Pak |