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STF15N95K5 Datasheet

STF15N95K5 Cover
DatasheetSTF15N95K5
File Size1,252.67 KB
Total Pages18
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts STF15N95K5, STP15N95K5, STW15N95K5
Description MOSFET N-CH 950V 12A TO220FP, MOSFET N-CH 950V 12A TO220, MOSFET N-CH 950V 12A TO247

STF15N95K5 - STMicroelectronics

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The Products You May Be Interested In

STF15N95K5 STF15N95K5 STMicroelectronics MOSFET N-CH 950V 12A TO220FP 158

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STP15N95K5 STP15N95K5 STMicroelectronics MOSFET N-CH 950V 12A TO220 282

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STW15N95K5 STW15N95K5 STMicroelectronics MOSFET N-CH 950V 12A TO247 511

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URL Link

STF15N95K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 100V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

STP15N95K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 100V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

STW15N95K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 100V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3