Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STF24N65M2 |
| File Size | 1,178.57 KB |
| Total Pages | 20 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | STF24N65M2, STB24N65M2, STP24N65M2 |
| Description | MOSFET N-CH 650V 16A TO220FP, MOSFET N-CH 650V 16A D2PAK, MOSFET N-CH 650V 16A TO-220AB |
STF24N65M2 - STMicroelectronics
The Products You May Be Interested In
 |
STF24N65M2 | STMicroelectronics | MOSFET N-CH 650V 16A TO220FP | 492 More on Order |
 |
STB24N65M2 | STMicroelectronics | MOSFET N-CH 650V 16A D2PAK | 285 More on Order |
 |
STP24N65M2 | STMicroelectronics | MOSFET N-CH 650V 16A TO-220AB | 2107 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 100V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 100V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 100V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |