![STF32N65M5 Cover](http://media.oemstron.com/oemstron/datasheet/sm/stf32n65m5-0001.jpg)
Datasheet | STF32N65M5 |
File Size | 861.73 KB |
Total Pages | 17 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 5 part numbers |
Associated Parts | STF32N65M5, STB32N65M5, STW32N65M5, STP32N65M5, STI32N65M5 |
Description | MOSFET N-CH 650V 24A TO-220FP, MOSFET N-CH 650V 24A D2PAK, MOSFET N-CH 650V 24A TO-247, MOSFET N-CH 650V 24A TO-220, MOSFET N-CH 650V 24A I2PAK |
STF32N65M5 - STMicroelectronics
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The Products You May Be Interested In
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STW32N65M5 | STMicroelectronics | MOSFET N-CH 650V 24A TO-247 | 1082 More on Order |
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STP32N65M5 | STMicroelectronics | MOSFET N-CH 650V 24A TO-220 | 716 More on Order |
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STI32N65M5 | STMicroelectronics | MOSFET N-CH 650V 24A I2PAK | 1988 More on Order |
URL Link
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 119mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 100V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 119mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 100V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 119mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 100V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 119mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 100V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 119mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 100V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |