Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STF6N80K5 |
| File Size | 825.45 KB |
| Total Pages | 15 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STF6N80K5, STFI6N80K5 |
| Description | MOSFET N-CH 800V 4.5A TO-220FP, MOSFET N-CH 800V 4.5A I2PAK-FP |
STF6N80K5 - STMicroelectronics
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Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAKFP (TO-281) Package / Case TO-262-3 Full Pack, I²Pak |