Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STF8NK100Z |
| File Size | 290.8 KB |
| Total Pages | 13 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STF8NK100Z, STP8NK100Z |
| Description | MOSFET N-CH 1000V 6.5A TO220FP, MOSFET N-CH 1000V 6.5A TO-220 |
STF8NK100Z - STMicroelectronics
The Products You May Be Interested In
 |
STF8NK100Z | STMicroelectronics | MOSFET N-CH 1000V 6.5A TO220FP | 1573 More on Order |
 |
STP8NK100Z | STMicroelectronics | MOSFET N-CH 1000V 6.5A TO-220 | 2701 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.85Ohm @ 3.15A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.85Ohm @ 3.15A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V FET Feature - Power Dissipation (Max) 160W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |