Datasheet | STFW20N65M5 |
File Size | 1,052.38 KB |
Total Pages | 18 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | STFW20N65M5, STF20N65M5, STFI20N65M5 |
Description | MOSFET N-CH 650V 18A TO-3PF, MOSFET N CH 650V 18A TO-220FP, MOSFET N CH 650V 18A I2PAKFP |
STFW20N65M5 - STMicroelectronics
The Products You May Be Interested In
STFW20N65M5 | STMicroelectronics | MOSFET N-CH 650V 18A TO-3PF | 409 More on Order |
|
STF20N65M5 | STMicroelectronics | MOSFET N CH 650V 18A TO-220FP | 398 More on Order |
|
STFI20N65M5 | STMicroelectronics | MOSFET N CH 650V 18A I2PAKFP | 2891 More on Order |
URL Link
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ M5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1434pF @ 100V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOWATT-218FX Package / Case ISOWATT218FX |
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1345pF @ 100V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1345pF @ 100V FET Feature - Power Dissipation (Max) 130W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAKFP (TO-281) Package / Case TO-262-3 Full Pack, I²Pak |