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STGB10NB60ST4 Datasheet

STGB10NB60ST4 Cover
DatasheetSTGB10NB60ST4
File Size603.56 KB
Total Pages19
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STGB10NB60ST4, STGP10NB60S
Description IGBT 600V 29A 80W D2PAK, IGBT 600V 29A 80W TO220

STGB10NB60ST4 - STMicroelectronics

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The Products You May Be Interested In

STGB10NB60ST4 STGB10NB60ST4 STMicroelectronics IGBT 600V 29A 80W D2PAK 349

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STGP10NB60S STGP10NB60S STMicroelectronics IGBT 600V 29A 80W TO220 2430

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URL Link

STGB10NB60ST4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

29A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

1.75V @ 15V, 10A

Power - Max

80W

Switching Energy

600µJ (on), 5mJ (off)

Input Type

Standard

Gate Charge

33nC

Td (on/off) @ 25°C

700ns/1.2µs

Test Condition

480V, 10A, 1kOhm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D²PAK

STGP10NB60S

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

29A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

1.75V @ 15V, 10A

Power - Max

80W

Switching Energy

600µJ (on), 5mJ (off)

Input Type

Standard

Gate Charge

33nC

Td (on/off) @ 25°C

700ns/1.2µs

Test Condition

480V, 10A, 1kOhm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB