Datasheet | STGB4M65DF2 |
File Size | 1,161.76 KB |
Total Pages | 18 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | STGB4M65DF2 |
Description | TRENCH GATE FIELD-STOP IGBT, M S |
STGB4M65DF2 - STMicroelectronics
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URL Link
www.oemstron.com/datasheet/STGB4M65DF2
STMicroelectronics Manufacturer STMicroelectronics Series M IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 8A Current - Collector Pulsed (Icm) 16A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A Power - Max 68W Switching Energy 40µJ (on), 136µJ (off) Input Type Standard Gate Charge 15.2nC Td (on/off) @ 25°C 12ns/86ns Test Condition 400V, 4A, 47Ohm, 15V Reverse Recovery Time (trr) 133ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |