Datasheet | STGD6M65DF2 |
File Size | 909.41 KB |
Total Pages | 20 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | STGD6M65DF2 |
Description | TRENCH GATE FIELD-STOP IGBT, M S |
STGD6M65DF2 - STMicroelectronics
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URL Link
www.oemstron.com/datasheet/STGD6M65DF2
STMicroelectronics Manufacturer STMicroelectronics Series M IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 12A Current - Collector Pulsed (Icm) 24A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A Power - Max 88W Switching Energy 36µJ (on), 200µJ (off) Input Type Standard Gate Charge 21.2nC Td (on/off) @ 25°C 15ns/90ns Test Condition 400V, 6A, 22Ohm, 15V Reverse Recovery Time (trr) 140ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |