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| Datasheet | STGW80H65DFB-4 |
| File Size | 931.42 KB |
| Total Pages | 16 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | STGW80H65DFB-4 |
| Description | IGBT BIPO 650V 80A TO247 |
STGW80H65DFB-4 - STMicroelectronics
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STGW80H65DFB-4 | STMicroelectronics | IGBT BIPO 650V 80A TO247 | 191 More on Order |
URL Link
www.oemstron.com/datasheet/STGW80H65DFB-4
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Manufacturer STMicroelectronics Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 120A Current - Collector Pulsed (Icm) 240A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A Power - Max 469W Switching Energy 2.1mJ (on), 1.5mJ (off) Input Type Standard Gate Charge 414nC Td (on/off) @ 25°C 84ns/280ns Test Condition 400V, 80A, 10Ohm, 15V Reverse Recovery Time (trr) 85ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-4 Supplier Device Package TO-247-4L |