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| Datasheet | STH160N4LF6-2 |
| File Size | 1,024.9 KB |
| Total Pages | 17 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | STH160N4LF6-2 |
| Description | MOSFET N-CH 40V 120A H2PAK-2 |
STH160N4LF6-2 - STMicroelectronics
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URL Link
www.oemstron.com/datasheet/STH160N4LF6-2
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Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VI FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 60A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 20V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2Pak-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |