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STH270N8F7-2 Datasheet

STH270N8F7-2 Cover
DatasheetSTH270N8F7-2
File Size1,654.67 KB
Total Pages22
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts STH270N8F7-2, STP270N8F7, STH270N8F7-6
Description MOSFET N-CH 80V 180A H2PAK-2, MOSFET N CH 80V 180A TO220, MOSFET N-CH 80V 180A H2PAK-6

STH270N8F7-2 - STMicroelectronics

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URL Link

STH270N8F7-2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

193nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 50V

FET Feature

-

Power Dissipation (Max)

315W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H²PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab) Variant

STP270N8F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

193nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 50V

FET Feature

-

Power Dissipation (Max)

315W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

STH270N8F7-6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

193nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 50V

FET Feature

-

Power Dissipation (Max)

315W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H²PAK

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)