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| Datasheet | STH410N4F7-6AG |
| File Size | 842.77 KB |
| Total Pages | 19 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STH410N4F7-6AG, STH410N4F7-2AG |
| Description | MOSFET N-CH 40V H2PAK-6, MOSFET N-CH 40V H2PAK-2 |
STH410N4F7-6AG - STMicroelectronics
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Manufacturer STMicroelectronics Series Automotive, AEC-Q101, STripFET™ F7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 25V FET Feature - Power Dissipation (Max) 365W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2PAK-6 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
Manufacturer STMicroelectronics Series Automotive, AEC-Q101, STripFET™ F7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 25V FET Feature - Power Dissipation (Max) 365W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2Pak-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |