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STI14NM50N Datasheet

STI14NM50N Cover
DatasheetSTI14NM50N
File Size1,269.09 KB
Total Pages18
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts STI14NM50N, STF14NM50N, STP14NM50N
Description MOSFET N CH 500V 12A I2PAK, MOSFET N-CH 500V 12A TO220FP, MOSFET N-CH 500V 12A TO-220

STI14NM50N - STMicroelectronics

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The Products You May Be Interested In

STI14NM50N STI14NM50N STMicroelectronics MOSFET N CH 500V 12A I2PAK 1447

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STF14NM50N STF14NM50N STMicroelectronics MOSFET N-CH 500V 12A TO220FP 2022

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STP14NM50N STP14NM50N STMicroelectronics MOSFET N-CH 500V 12A TO-220 1846

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URL Link

STI14NM50N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

816pF @ 50V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

STF14NM50N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

816pF @ 50V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

STP14NM50N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

816pF @ 50V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3