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Datasheet | STI14NM50N |
File Size | 1,269.09 KB |
Total Pages | 18 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | STI14NM50N, STF14NM50N, STP14NM50N |
Description | MOSFET N CH 500V 12A I2PAK, MOSFET N-CH 500V 12A TO220FP, MOSFET N-CH 500V 12A TO-220 |
STI14NM50N - STMicroelectronics
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The Products You May Be Interested In
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STI14NM50N | STMicroelectronics | MOSFET N CH 500V 12A I2PAK | 1447 More on Order |
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STF14NM50N | STMicroelectronics | MOSFET N-CH 500V 12A TO220FP | 2022 More on Order |
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STP14NM50N | STMicroelectronics | MOSFET N-CH 500V 12A TO-220 | 1846 More on Order |
URL Link
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 816pF @ 50V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 816pF @ 50V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 816pF @ 50V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |