Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

STL11N6F7 Datasheet

STL11N6F7 Cover
DatasheetSTL11N6F7
File Size653.17 KB
Total Pages13
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STL11N6F7
Description MOSFET N-CH 60V 11A POWERFLAT

STL11N6F7 - STMicroelectronics

STL11N6F7 Datasheet Page 1
STL11N6F7 Datasheet Page 2
STL11N6F7 Datasheet Page 3
STL11N6F7 Datasheet Page 4
STL11N6F7 Datasheet Page 5
STL11N6F7 Datasheet Page 6
STL11N6F7 Datasheet Page 7
STL11N6F7 Datasheet Page 8
STL11N6F7 Datasheet Page 9
STL11N6F7 Datasheet Page 10
STL11N6F7 Datasheet Page 11
STL11N6F7 Datasheet Page 12
STL11N6F7 Datasheet Page 13

The Products You May Be Interested In

STL11N6F7 STL11N6F7 STMicroelectronics MOSFET N-CH 60V 11A POWERFLAT 3881

More on Order

URL Link

STL11N6F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1035pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.9W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (3.3x3.3)

Package / Case

8-PowerVDFN