Datasheet | STP11NM60FD |
File Size | 486.74 KB |
Total Pages | 17 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | STP11NM60FD, STB11NM60FDT4, STP11NM60FDFP |
Description | MOSFET N-CH 600V 11A TO-220, MOSFET N-CH 600V 11A D2PAK, MOSFET N-CH 600V 11A TO-220FP |
STP11NM60FD - STMicroelectronics
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STP11NM60FD | STMicroelectronics | MOSFET N-CH 600V 11A TO-220 | 422 More on Order |
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STB11NM60FDT4 | STMicroelectronics | MOSFET N-CH 600V 11A D2PAK | 497 More on Order |
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STP11NM60FDFP | STMicroelectronics | MOSFET N-CH 600V 11A TO-220FP | 697 More on Order |
URL Link
STMicroelectronics Manufacturer STMicroelectronics Series FDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V FET Feature - Power Dissipation (Max) 160W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
STMicroelectronics Manufacturer STMicroelectronics Series FDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V FET Feature - Power Dissipation (Max) 160W (Tc) Operating Temperature - Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
STMicroelectronics Manufacturer STMicroelectronics Series FDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |