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Datasheet | STP15NM65N |
File Size | 914.39 KB |
Total Pages | 15 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | STP15NM65N, STFI15NM65N, STF15NM65N |
Description | MOSFET N-CH 650V 12A TO-220, MOSFET N-CH 650V I2PAK-FP, MOSFET N-CH 650V 12A TO-220FP |
STP15NM65N - STMicroelectronics
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The Products You May Be Interested In
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STP15NM65N | STMicroelectronics | MOSFET N-CH 650V 12A TO-220 | 1553 More on Order |
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STFI15NM65N | STMicroelectronics | MOSFET N-CH 650V I2PAK-FP | 670 More on Order |
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STF15NM65N | STMicroelectronics | MOSFET N-CH 650V 12A TO-220FP | 1610 More on Order |
URL Link
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 983pF @ 50V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 983pF @ 50V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAKFP (TO-281) Package / Case TO-262-3 Full Pack, I²Pak |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 983pF @ 50V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |