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| Datasheet | STP21NM50N |
| File Size | 463.74 KB |
| Total Pages | 18 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 5 part numbers |
| Associated Parts | STP21NM50N, STW21NM50N, STF21NM50N, STB21NM50N, STB21NM50N-1 |
| Description | MOSFET N-CH 500V 18A TO-220, MOSFET N-CH 500V 18A TO-247, MOSFET N-CH 500V 18A TO220FP, MOSFET N-CH 500V 18A D2PAK, MOSFET N-CH 500V 18A I2PAK |
STP21NM50N - STMicroelectronics
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Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |