Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STP80N20M5 |
| File Size | 929.94 KB |
| Total Pages | 14 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STP80N20M5, STB80N20M5 |
| Description | MOSFET N-CH 200V 61A TO-220, MOSFET N-CH 200V 61A D2PAK |
STP80N20M5 - STMicroelectronics
The Products You May Be Interested In
 |
STP80N20M5 | STMicroelectronics | MOSFET N-CH 200V 61A TO-220 | 213 More on Order |
 |
STB80N20M5 | STMicroelectronics | MOSFET N-CH 200V 61A D2PAK | 294 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 61A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 30.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 4329pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 61A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 30.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 4329pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |